AE08187
Packsize | Purity | Availability | Price | Discounted Price | Quantity | |
---|---|---|---|---|---|---|
2g | 2 weeks | $667.00 | $467.00 | - + | ||
10g | 2 weeks | $1,731.00 | $1,212.00 | - + | ||
50g | 2 weeks | $6,430.00 | $4,501.00 | - + |
*All products are for research use only and not intended for human or animal use.
*All prices are in USD.
Catalog Number: | AE08187 |
Chemical Name: | GALLIUM PHOSPHIDE |
CAS Number: | 12063-98-8 |
Molecular Formula: | GaP |
Molecular Weight: | 100.6968 |
MDL Number: | MFCD00016109 |
SMILES: | [P]#[Ga] |
Gallium phosphide (GaP) is a versatile compound that finds wide application in chemical synthesis processes. As a semiconductor material, GaP can be utilized in the production of various electronic devices, including light-emitting diodes (LEDs), solar cells, and photodetectors. In chemical synthesis, GaP serves as a crucial precursor for the fabrication of gallium-based nanomaterials and heterostructures.One key application of GaP in chemical synthesis is its role as a catalyst in organic transformations. GaP nanoparticles have been employed as efficient and recyclable catalysts for organic reactions such as hydrogenation, dehydrogenation, and carbon-carbon bond formation. The unique surface properties of GaP allow for enhanced catalytic activity and selectivity in these reactions, making it a promising candidate for green and sustainable synthesis routes.Moreover, the use of GaP in chemical vapor deposition (CVD) processes enables the controlled growth of gallium-phosphide thin films and nanostructures. These thin films have demonstrated exceptional optoelectronic properties, making them valuable for applications in optoelectronic devices and semiconductor industry. By tuning the growth conditions during CVD, researchers can tailor the properties of GaP materials for specific synthesis requirements, opening up avenues for novel material design and development.